- saturation velocity
- saturation velocity Sättigungsgeschwindigkeit f
English-German dictionary of Electrical Engineering and Electronics. 2013.
saturation velocity
Schlagen Sie auch in anderen Wörterbüchern nach:
Velocity overshoot — is a result of transit times of a charge going from source to drain being smaller than the time required to emit an optical phonon. The velocity therefore exceeds the saturation velocity, which leads to faster Field Effect Transistor switching.… … Wikipedia
Saturation current — is a term used to describe a limit to the amount of current that can flow in an electronic circuit or device. As the voltage applied to a circuit is increased, the current flow will increase proportionately until the saturation current is… … Wikipedia
Velocity saturation — In semiconductors, when a strong enough electric field is applied, the carrier velocity in the semiconductor reaches a maximum value.cite web url = http://everything2.com/index.pl?node id=1321513 title = Velocity Saturation accessdate = 2006 10… … Wikipedia
Velocity saturation — Die Geschwindigkeitssättigung (engl. velocity saturation) bezeichnet einen der Kurzkanaleffekte bei Feldeffekttransistoren (FETs). Bei hohen Drainspannungen oder kleiner Kanallänge ( ) wird das longitudinale elektrische Feld E im Kanal sehr groß … Deutsch Wikipedia
saturation de la vitesse de dérive — dreifo greičio sotis statusas T sritis radioelektronika atitikmenys: angl. drift velocity saturation vok. Driftgeschwindigkeitssättigung, f rus. насыщение дрейфовой скорости, n pranc. saturation de la vitesse de dérive, f … Radioelektronikos terminų žodynas
drift velocity saturation — dreifo greičio sotis statusas T sritis radioelektronika atitikmenys: angl. drift velocity saturation vok. Driftgeschwindigkeitssättigung, f rus. насыщение дрейфовой скорости, n pranc. saturation de la vitesse de dérive, f … Radioelektronikos terminų žodynas
Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… … Wikipedia
Lau Wai Shing — Wai Shing Lau (simplified Chinese name: 刘偉成, born July 29, 1955 in Hong Kong) is also known as Lau Wai Shing. The family name of Lau is sometimes spelled as Liu like Liu Bang (founder of the Han dynasty) or Liu Shaoqi or Liu Bocheng. This is… … Wikipedia
Wide bandgap semiconductors — are semiconductor materials with electronic band gaps larger than one or two electronvolts (eV). The exact threshold of wideness often depends on the application, such as optoelectronic and power devices. Wide bandgap materials are often utilized … Wikipedia
Monte Carlo methods for electron transport — The Monte Carlo method for electron transport is a semiclassical Monte Carlo(MC) approach of modeling semiconductor transport. Assuming the carrier motion consists of free flights interrupted by scattering mechanisms, a computer is utilized to… … Wikipedia
Ballistic transport — is the transport of electrons in a medium with negligible electrical resistivity due to scattering. Without scattering, electrons simply obey Newton s second law of motion at non relativistic speeds.In general the resistivity exists because an… … Wikipedia
